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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2735 DESCRIPTION *Low Noise *High Gain APPLICATIONS *Designed for use in UHF ~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2735 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10A ; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 A hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain--Bandwidth Product IC= 10mA ; VCE= 10V 600 1200 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.85 1.5 pF CG Conversion Gain IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) 21 dB NF Noise Figure 6.5 dB VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 300MHz 210 mV VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 930MHz 130 mV isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2735 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2735 isc Websitewww.iscsemi.cn 4 |
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